Air Gap Seal for Interconnect Air Gap and Method of Fabricating Thereof

ABSTRACT

Interconnects that facilitate reduced capacitance and/or resistance and corresponding techniques for forming the interconnects are disclosed herein. An exemplary interconnect is disposed in an insulating layer. The interconnect has a metal contact, a contact isolation layer surrounding sidewalls of the metal contact, and an air gap disposed between the contact isolation layer and the insulating layer. An air gap seal for the air gap has a first portion disposed over a top surface of the contact isolation layer, but not disposed on a top surface of the insulating layer, and a second portion disposed between the contact isolation layer and the insulating layer, such that the second portion surrounds a top portion of sidewalls of the metal contact. The air gap seal may include amorphous silicon and/or silicon oxide. The contact isolation layer may include silicon nitride. The insulating layer may include silicon oxide.

The present application is a divisional application of U.S. patentapplication Ser. No. 16/817,111, filed Mar. 12, 2020, which is anon-provisional application of and claims benefit of U.S. PatentApplication Ser. No. 62/868,012, filed Jun. 28, 2019, the entiredisclosures of which are incorporated herein by reference.

BACKGROUND

The integrated circuit (IC) industry has experienced exponential growth.Technological advances in IC materials and design have producedgenerations of ICs, where each generation has smaller and more complexcircuits than the previous generation. In the course of IC evolution,functional density (i.e., the number of interconnected IC devices perchip area) has generally increased while geometry size (i.e., dimensionsand/or sizes of IC features and/or spacings between these IC features)has decreased. Typically, scaling down has been limited only by anability to lithographically define IC features at the ever-decreasinggeometry sizes. However, resistance-capacitance (RC) delay has arisen asa significant challenge as reduced geometry sizes are implemented toachieve ICs with faster operating speeds (e.g., by reducing distancestraveled by electrical signals), thereby negating some of the advantagesachieved by scaling down and limiting further scaling down of ICs. RCdelay generally indicates delay in electrical signal speed through an ICresulting from a product of resistance (R) (i.e., a material'sopposition to flow of electrical current) and capacitance (C) (i.e., amaterial's ability to store electrical charge). Reducing both resistanceand capacitance is thus desired to reduce RC delay and optimizeperformance of scaled down ICs. Interconnects of ICs, which physicallyand/or electrically connect IC components and/or IC features of the ICs,are particularly problematic in their contributions to RC delay. A needthus exists for improvements in interconnects of ICs and/or methods offabricating interconnects of ICs.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1 is a flow chart of a method for fabricating an interconnect of anintegrated circuit device according to various aspects of the presentdisclosure.

FIGS. 2-7 are fragmentary diagrammatic views of an integrated circuitdevice, in portion or entirety, at various stages of fabricating aninterconnect, such as the method for fabricating an interconnect of anintegrated circuit device of FIG. 1, according to various aspects of thepresent disclosure.

FIG. 8A and FIG. 8B are fragmentary diagrammatic views of the integratedcircuit device, in portion or entirety, at various stages of fabricatingthe interconnect, such as the method for fabricating an interconnect ofan integrated circuit device of FIG. 1, according to various aspects ofthe present disclosure.

DETAILED DESCRIPTION

The present disclosure relates generally to integrated circuit devices,and more particularly, to interconnects for integrated circuit devices.

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact.

In addition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.Moreover, the formation of a feature on, connected to, and/or coupled toanother feature in the present disclosure that follows may includeembodiments in which the features are formed in direct contact, and mayalso include embodiments in which additional features may be formedinterposing the features, such that the features may not be in directcontact. In addition, spatially relative terms, for example, “lower,”“upper,” “horizontal,” “vertical,” “above,” “over,” “below,” “beneath,”“up,” “down,” “top,” “bottom,” etc. as well as derivatives thereof(e.g., “horizontally,” “downwardly,” “upwardly,” etc.) are used for easeof the present disclosure of one features relationship to anotherfeature. The spatially relative terms are intended to cover differentorientations of the device including the features.

IC manufacturing process flow is typically divided into threecategories: front-end-of-line (FEOL), middle-end-of-line (MEOL), andback-end-of-line (BEOL). FEOL generally encompasses processes related tofabricating IC devices, such as transistors. For example, FEOL processescan include forming isolation features, gate structures, and source anddrain features (generally referred to as source/drain features). MEOLgenerally encompasses processes related to fabricating contacts toconductive features (or conductive regions) of the IC devices, such ascontacts (also referred to as interconnects) to the gate structuresand/or the source/drain features. BEOL generally encompasses processesrelated to fabricating interconnects that physically and/or electricallyinterconnect IC features fabricated by FEOL processes (referred toherein as FEOL features or structures) and/or MEOL processes (referredto herein as MEOL features or structures), thereby enabling operation ofthe IC devices. For example, BEOL processes can include forminginterconnects, such as vias and/or conductive lines, of a multilayerinterconnect feature. The interconnects of MEOL processes and the BEOLprocesses physically and/or electrically connect IC components and/or ICfeatures of the IC devices, thereby facilitating operation of the ICdevices. As IC technologies progress towards smaller technology nodes,resistance and capacitance associated with interconnects have presentedchallenges to reducing resistance-capacitance (RC) delay of the ICdevices.

Reducing resistance associated with interconnects has been achieved byimplementing interconnect materials (for example, cobalt and/orruthenium replacing copper and/or tantalum) and/or interconnectconfigurations (for example, reducing thicknesses of barrier/linerlayers of the interconnects and/or modifying profiles of theinterconnects) that exhibit decreased resistance and facilitateincreased electrical current flow. Reducing capacitance is moredifficult because, for any two adjacent conductive features (forexample, two adjacent interconnects, an interconnect adjacent to a gate,etc.), capacitance is a function of a dielectric constant of insulatingmaterial surrounding the two conductive features and a distance betweenthe two conductive features. Since decreased distances (spacing) betweenconductive features results from scaling down ICs (and thus results inincreased capacitance), capacitance reduction techniques have focused onreducing the dielectric constant of the insulating material. Forexample, low-k dielectric materials, such as dielectric materials havingdielectric constants less than silicon oxide (for example, SiO₂), havebeen developed that reduce parasitic capacitance and/or capacitivecoupling between interconnects and adjacent conductive features, such asadjacent interconnects or adjacent device features (for example, gates).

Recently, air has been explored for insulating interconnects because airhas a significantly lower dielectric constant than many low-k dielectricmaterials. For example, an air gap (also referred to as an air spacer)can be inserted between an interconnect and an adjacent conductivefeature. Though the air gap provides desired capacitance reduction whencompared to low-k dielectric materials, conventional air gap fabricationsuffers from drawbacks. One such drawback is associated with subsequentprocessing. For example, where the air gap is inserted between adevice-level contact (for example, a source/drain contact) and a gate,subsequent processing may involve depositing a dielectric seal layer(for example, an oxide layer) over the air gap and the device-levelcontact to seal the air gap, depositing an interlayer dielectric layer(often including a low-k dielectric material) over the dielectric seallayer, patterning and etching the interlayer dielectric layer and thedielectric seal layer to form a via opening, and filling the via openingwith metal to form a via, such that the via is connected to thedevice-level contact. In one scenario, misalignment may occur duringpatterning that causes the etching to remove the dielectric seal layerover the air gap, exposing the air gap to the filling process. Inanother scenario, dimensions of the via may be intentionally larger thanthe device-level contact (for example, for an over-sized via), such thatthe patterning and etching required to achieve the via opening for theover-sized via exposes the air gap to the filling process. In yetanother scenario, dimensions of the via may be unintentionally largerthan the device-level contact as a result of processing variations, suchthat the patterning and etching required to achieve the via opening forthe via unintentionally exposes the air gap to the filling process. Eachof these scenarios may introduce metal into the air gap when filling thevia opening to form the via, such that the metal contacts the air gap.This degrades capacitance reduction achieved by the air gap, impedingimprovements in RC delay of corresponding IC devices. The presentdisclosure thus proposes an air gap seal and method of fabricating theair gap seal that overcomes these challenges and preserves air gapintegrity, as described in detail herein.

FIG. 1 is a flow chart of a method 10 for fabricating an interconnect ofan IC device according to various aspects of the present disclosure. Theinterconnect fabricated by method 10 can reduce capacitance and/orresistance associated with the IC device, thereby reducing associated RCdelay. At block 20, method 10 includes forming a first interconnect in afirst insulating layer. The first interconnect includes a metal contact,a contact isolation layer disposed along sidewalls of the metal contact,and a dummy contact layer disposed between the first insulating layerand the contact isolation layer. The dummy contact layer is disposedalong the sidewalls of the metal contact. In some embodiments, thecontact isolation layer is a silicon nitride layer, and the firstinsulating layer is a silicon oxide layer. At block 30, method 10includes removing the dummy contact layer from the first interconnect toform an air gap between the first insulating layer and the contactisolation layer. In some embodiments, an etching process selectivelyremoves the dummy contact layer but not does not remove, orsubstantially remove, the contact isolation layer and the firstinsulating layer. At block 40, method 10 includes forming an air gapseal by performing a deposition process that selectively deposits an airgap seal material on the contact isolation layer without depositing theair gap seal material on the first insulating layer. In someembodiments, the deposition process forms the air gap seal material onsilicon nitride surfaces but not on silicon oxide surfaces. In someembodiments, the air gap seal material includes amorphous silicon.

At block 50, method 10 includes forming a second insulating layer overthe first interconnect, the first insulating layer, and the air gapseal. At block 60, method 10 includes forming an interconnect opening inthe second insulating layer that exposes the first interconnect. Atblock 70, method 10 includes forming a second interconnect in the secondinsulating layer over and physically contacting the first interconnect.In some embodiments, the first interconnect is a device-level contact,such as a gate contact or a source/drain contact, and the secondinterconnect is a via. In some embodiments, the first interconnect is avia and the second interconnect is a conductive line. In someembodiments, before forming the second interconnect, an oxidationprocess is performed on the air gap seal. In some embodiments, the airgap seal includes silicon oxide after the oxidation process. In someembodiments, the air gap seal includes amorphous silicon portions andsilicon oxide portions after the oxidation process. Additionalprocessing is contemplated by the present disclosure. Additional stepscan be provided before, during, and after method 10, and some of thesteps described can be moved, replaced, or eliminated for additionalembodiments of method 10. The following discussion providesinterconnects that can be fabricated according to method 10.

FIGS. 2-7 are fragmentary diagrammatic views of an integrated circuit(IC) device 200, in portion or entirety, at various stages offabricating an interconnect of IC device 200 (such as those associatedwith method 100 in FIG. 1), according to various aspects of the presentdisclosure. IC device 200 may be included in a microprocessor, a memory,and/or other IC device. In some embodiments, IC device 200 may be aportion of an IC chip, a system on chip (SoC), or portion thereof, thatincludes various passive and active microelectronic devices such asresistors, capacitors, inductors, diodes, p-type FETs (PFETs), n-typeFETs (NFETs), metal-oxide-semiconductor FETs (MOSFETs), complementaryMOS (CMOS) transistors, bipolar junction transistors (BJTs), laterallydiffused MOS (LDMOS) transistors, high voltage transistors, highfrequency transistors, other suitable components, or combinationsthereof. The various transistors may be planar transistors or multi-gatetransistors, such as FinFETs, depending on design requirements of ICdevice 200. FIGS. 2-7 have been simplified for the sake of clarity tobetter understand the inventive concepts of the present disclosure.Additional features can be added in IC device 200, and some of thefeatures described below can be replaced, modified, or eliminated inother embodiments of IC device 200.

Turning to FIG. 2, IC device 200 includes a substrate (wafer) 210. Inthe depicted embodiment, substrate 210 includes silicon. Alternativelyor additionally, substrate 210 includes another elementarysemiconductor, such as germanium; a compound semiconductor, such assilicon carbide, gallium arsenide, gallium phosphide, indium phosphide,indium arsenide, and/or indium antimonide; an alloy semiconductor, suchas silicon germanium (SiGe), GaAsP, AlInAs, AlGaAs, GaInAs, GaInP,and/or GaInAsP; or combinations thereof. Alternatively, substrate 210 isa semiconductor-on-insulator substrate, such as a silicon-on-insulator(SOI) substrate, a silicon germanium-on-insulator (SGOI) substrate, or agermanium-on-insulator (GOI) substrate. Semiconductor-on-insulatorsubstrates can be fabricated using separation by implantation of oxygen(SIMOX), wafer bonding, and/or other suitable methods. Substrate 210 caninclude doped regions formed by an ion implantation process, a diffusionprocess, and/or other suitable doping process depending on designrequirements of IC device 200. In some embodiments, substrate 210includes p-type doped regions (for example, p-type wells) doped withp-type dopants, such as boron, indium, other p-type dopant, orcombinations thereof. In some embodiments, substrate 210 includes n-typedoped regions (for example, n-type wells) doped with n-type dopants,such as phosphorus, arsenic, other n-type dopant, or combinationsthereof. In some embodiments, substrate 210 includes doped regionsformed with a combination of p-type dopants and n-type dopants. Thevarious doped regions can be formed directly on and/or in substrate 210,for example, providing a p-well structure, an n-well structure, adual-well structure, a raised structure, or combinations thereof.

Isolation features can be formed over and/or in substrate 210 to isolatevarious regions, such as device regions, of IC device 200. For example,isolation features define and electrically isolate active device regionsand/or passive device regions from each other. Isolation featuresinclude silicon oxide, silicon nitride, silicon oxynitride, othersuitable isolation material (for example, including silicon, oxygen,nitrogen, carbon, or other suitable isolation constituent), orcombinations thereof. Isolation features can include differentstructures, such as shallow trench isolation (STI) structures, deeptrench isolation (DTI) structures, and/or local oxidation of silicon(LOCOS) structures. In some embodiments, isolation features are formedby etching a trench (or trenches) in substrate 210 and filling thetrench with insulator material (for example, using a chemical vapordeposition process or a spin-on glass process). A chemical mechanicalpolishing (CMP) process may be performed to remove excessive insulatormaterial and/or planarize a top surface of isolation features. In someembodiments, isolation features can be formed by depositing an insulatormaterial over substrate 210 after forming fin structures (in someembodiments, such that the insulator material layer fills gaps(trenches) between the fin structures) and etching back the insulatormaterial layer. In some embodiments, isolation features include amulti-layer structure that fills trenches, such as a bulk dielectriclayer disposed over a liner dielectric layer, where the bulk dielectriclayer and the liner dielectric layer include materials depending ondesign requirements (for example, a bulk dielectric layer that includessilicon nitride disposed over a liner dielectric layer that includesthermal oxide). In some embodiments, isolation features include adielectric layer disposed over a doped liner layer (including, forexample, boron silicate glass (BSG) or phosphosilicate glass (PSG)).

Various gate structures are disposed over substrate 210, such as a gatestructure 230A and a gate structure 230B. Gate structures 230A, 230Beach engage a respective channel region defined between a respectivesource region and a respective drain region, such that current can flowbetween the respective source/drain regions during operation. In someembodiments, gate structures 230A, 230B are formed over a fin structure,such that gate structure 230A, 230B each wrap a portion of the finstructure and interpose a respective source region and a respectivedrain region (collectively referred to as source/drain regions) of thefin structure. Gate structures 230A, 230B each include a metal gate (MG)stack, such as a metal gate stack 232. Metal gate stacks 232 are formedby deposition processes, lithography processes, etching processes, othersuitable processes, or combinations thereof. The deposition processesinclude CVD, physical vapor deposition (PVD), atomic layer deposition(ALD), high density plasma CVD (HDPCVD), metal organic CVD (MOCVD),remote plasma CVD (RPCVD), plasma enhanced CVD (PECVD), low-pressure CVD(LPCVD), atomic layer CVD (ALCVD), atmospheric pressure CVD (APCVD),plasma enhanced ALD (PEALD), plating, other suitable methods, orcombinations thereof. The lithography patterning processes includeresist coating (for example, spin-on coating), soft baking, maskaligning, exposure, post-exposure baking, developing the resist,rinsing, drying (for example, hard baking), other suitable processes, orcombinations thereof. Alternatively, the lithography exposure process isassisted, implemented, or replaced by other methods, such as masklesslithography, electron-beam writing, or ion-beam writing. The etchingprocesses include dry etching processes, wet etching processes, otheretching processes, or combinations thereof. Metal gate stacks 232 arefabricated according to a gate last process, a gate first process, or ahybrid gate last/gate first process. In gate last process embodiments,gate structures 230A, 230B include dummy gate stacks that aresubsequently replaced with metal gate stacks 232. The dummy gate stacksinclude, for example, an interfacial layer (including, for example,silicon oxide) and a dummy gate electrode layer (including, for example,polysilicon). In such embodiments, the dummy gate electrode layer isremoved, thereby forming openings (trenches) that are subsequentlyfilled with metal gate stacks 232.

Metal gate stacks 232 are configured to achieve desired functionalityaccording to design requirements of IC device 200, such that metal gatestack 232 of gate structure 230A may include the same or differentlayers and/or materials as metal gate stack 232 of gate structure 230B.In some embodiments, metal gate stacks 232 include a gate dielectric(for example, a gate dielectric layer) and a gate electrode (forexample, a work function layer and a bulk conductive layer). Metal gatestacks 232 may include numerous other layers, for example, cappinglayers, interface layers, diffusion layers, barrier layers, hard masklayers, or combinations thereof. In some embodiments, the gatedielectric layer is disposed over an interfacial layer (including adielectric material, such as silicon oxide), and the gate electrode isdisposed over the gate dielectric layer. The gate dielectric layerincludes a dielectric material, such as silicon oxide, high-k dielectricmaterial, other suitable dielectric material, or combinations thereof.Examples of high-k dielectric material include hafnium dioxide (HfO₂),HfSiO, HfSiON, HfTaO, HfSiO, HfZrO, zirconium oxide, aluminum oxide,hafnium dioxide-alumina (HfO₂—Al₂O₃) alloy, other suitable high-kdielectric materials, or combinations thereof. High-k dielectricmaterial generally refers to dielectric materials having a highdielectric constant (k value) relative to a dielectric constant ofsilicon dioxide (k≈3.9). For example, high-k dielectric material has adielectric constant greater than about 3.9. In some embodiments, thegate dielectric layer is a high-k dielectric layer. The gate electrodeincludes a conductive material, such as polysilicon, aluminum (Al),copper (Cu), titanium (Ti), tantalum (Ta), tungsten (W), molybdenum(Mo), cobalt (Co), TaN, NiSi, CoSi, TiN, WN, TiAl, TiAlN, TaCN, TaC,TaSiN, other conductive material, or combinations thereof. In someembodiments, the work function layer is a conductive layer tuned to havea desired work function (such as an n-type work function or a p-typework function), and the conductive bulk layer is a conductive layerformed over the work function layer. In some embodiments, the workfunction layer includes n-type work function materials, such as Ti,silver (Ag), manganese (Mn), zirconium (Zr), TaAl, TaAlC, TiAlN, TaC,TaCN, TaSiN, other suitable n-type work function materials, orcombinations thereof. In some embodiments, the work function layerincludes a p-type work function material, such as ruthenium (Ru), Mo,Al, TiN, TaN, WN, ZrSi₂, MoSi₂, TaSi₂, NiSi₂, WN, other suitable p-typework function materials, or combinations thereof. The bulk (or fill)conductive layer includes a suitable conductive material, such as Al, W,and/or Cu. The bulk conductive layer may additionally or collectivelyinclude polysilicon, Ti, Ta, metal alloys, other suitable materials, orcombinations thereof.

Gate structures 230A, 230B further include gate spacers 236, which aredisposed adjacent to (for example, along sidewalls of) metal gate stacks232. Gate spacers 236 are formed by any suitable process and include adielectric material. The dielectric material can include silicon,oxygen, carbon, nitrogen, other suitable material, or combinationsthereof (for example, silicon oxide, silicon nitride, siliconoxynitride, or silicon carbide). For example, in the depictedembodiment, a dielectric layer including silicon and nitrogen, such as asilicon nitride layer, can be deposited over substrate 210 andsubsequently anisotropically etched to form gate spacers 236. In someembodiments, gate spacers 236 include a multi-layer structure, such as afirst dielectric layer that includes silicon nitride and a seconddielectric layer that includes silicon oxide. In some embodiments, morethan one set of spacers, such as seal spacers, offset spacers,sacrificial spacers, dummy spacers, and/or main spacers, are formedadjacent to metal gate stacks 232. In such embodiments, the various setsof spacers can include materials having different etch rates. Forexample, a first dielectric layer including silicon and oxygen (forexample, silicon oxide) can be deposited over substrate 210 andsubsequently anisotropically etched to form a first spacer set adjacentto metal gate stacks 232 (or dummy metal gate stacks, in someembodiments), and a second dielectric layer including silicon andnitrogen (for example, silicon nitride) can be deposited over substrate210 and subsequently anisotropically etched to form a second spacer setadjacent to the first spacer set. Implantation, diffusion, and/orannealing processes may be performed to form lightly doped source anddrain (LDD) features and/or heavily doped source and drain (HDD)features in substrate 210 before and/or after forming gate spacers 236,depending on design requirements of IC device 200.

Epitaxial source features and epitaxial drain features (referred to asepitaxial source/drain features), such as an epitaxial source/drainfeature 240A, an epitaxial source/drain feature 240B, and an epitaxialsource/drain feature 240C, are disposed in source/drain regions ofsubstrate 210. Gate structure 230A interposes epitaxial source/drainfeature 240A and epitaxial source/drain feature 240B, such that achannel region is defined between epitaxial source/drain feature 240Aand epitaxial source/drain feature 240B. Gate structure 230B interposesepitaxial source/drain feature 240A and epitaxial source/drain feature240C, such that a channel region is defined between epitaxialsource/drain feature 240A and epitaxial source/drain feature 240C. Insome embodiments, gate structure 230A, epitaxial source/drain feature240A, and epitaxial source/drain feature 240B form a portion of a firsttransistor of IC device 200, and gate structure 230B, epitaxialsource/drain feature 240A, and epitaxial source/drain feature 240C forma portion of a second transistor of IC device 200. In some embodiments,a semiconductor material is epitaxially grown on and/or from substrate210 to form epitaxial source/drain features 240A-240C over source/drainregions of substrate 210. In some embodiments, an etching process isperformed on source/drain regions of substrate 210 to form source/drainrecesses, where epitaxial source/drain features 240A-240C are grown tofill the source/drain recesses. In some embodiments, where substrate 210represents a portion of a fin structure, epitaxial source/drain features240A-240C wrap source/drain regions of the fin structure and/or aredisposed in source/drain recesses of the fin structure depending ondesign requirements of IC device 200. An epitaxy process can implementCVD deposition techniques (for example, vapor-phase epitaxy (VPE),ultra-high vacuum CVD (UHV-CVD), LPCVD, and/or PECVD), molecular beamepitaxy, other suitable SEG processes, or combinations thereof. Theepitaxy process can use gaseous and/or liquid precursors, which interactwith the composition of substrate 210. Epitaxial source/drain features240A-240C are doped with n-type dopants and/or p-type dopants. In someembodiments, epitaxial source/drain features 240A-240C are epitaxiallayers including silicon and/or carbon, where the silicon-comprisingepitaxial layers or the silicon-carbon-comprising epitaxial layers aredoped with phosphorous, other n-type dopant, or combinations thereof. Insome embodiments, epitaxial source/drain features 240A-240C areepitaxial layers including silicon and germanium, where thesilicon-and-germanium-compromising epitaxial layers are doped withboron, other p-type dopant, or combinations thereof. In someembodiments, epitaxial source/drain features 240A-240C include materialsand/or dopants that achieve desired tensile stress and/or compressivestress in the channel regions. In some embodiments, epitaxialsource/drain features 240A-240C are doped during deposition by addingimpurities to a source material of the epitaxy process. In someembodiments, epitaxial source/drain features 240A-240C are doped by anion implantation process subsequent to a deposition process. In someembodiments, annealing processes are performed to activate dopants inepitaxial source/drain features 240A-240C and/or other source/drainregions of IC device 200 (for example, HDD regions and/or LDD regions).

A multilayer interconnect (MLI) feature 250 is disposed over substrate210. MLI feature 250 electrically couples various devices (for example,transistors, resistors, capacitors, and/or inductors) and/or components(for example, gate structures and/or source/drain features) of IC device200, such that the various devices and/or components can operate asspecified by design requirements of IC device 200. MLI feature 250includes a combination of dielectric layers and conductive layersconfigured to form various interconnects. The conductive layers areconfigured to form vertical interconnects, such as device-level contactsand/or vias, and/or horizontal interconnects, such as conductive lines.Vertical interconnects typically connect horizontal interconnects indifferent layers (or different planes) of MLI feature 250. In someembodiments, vertical interconnects and horizontal interconnects haverespective lengths and widths measured along the same direction, wherevertical interconnects have lengths greater than their widths, andhorizontal interconnects have lengths less their widths. Duringoperation of IC device 200, the interconnects are configured to routesignals between the devices and/or the components of IC device 200and/or distribute signals (for example, clock signals, voltage signals,and/or ground signals) to the devices and/or the components of IC device200. It is noted that though MLI feature 250 is depicted with a givennumber of dielectric layers and conductive layers, the presentdisclosure contemplates MLI feature 250 having more or less dielectriclayers and/or conductive layers depending on design requirements of ICdevice 200.

MLI feature 250 includes one or more insulating layers disposed oversubstrate 210, such as an interlayer dielectric (ILD) layer 252 (ILD-0),an interlayer dielectric (ILD) layer 254 (ILD-1), a contact etch stoplayers (CESL) 262, and a contact etch stop layer (CESL) 264. ILD layer252 is disposed over substrate 210, and ILD layer 254 is disposed overILD layer 252. CESL 262 is disposed between ILD layer 252 and substrate210, epitaxial source/drain features 240A-240C, and/or gate structures230A, 230B (in particular, spacers 236). CESL 264 is disposed betweenILD layer 252 and ILD layer 254. In some embodiments, a thickness of ILDlayer 252 is about 5 nm to about 50 nm, a thickness of ILD layer 254 isabout 2 nm to about 100 nm, a thickness of CESL 262 is about 1 nm toabout 10 nm, and a thickness of CESL 264 is about 1 nm to about 10 nm.ILD layers 252, 254 and/or CESLs 262, 264 are formed over substrate 210by a deposition process, such as CVD, PVD, ALD, HDPCVD, MOCVD, RPCVD,PECVD, LPCVD, ALCVD, APCVD, PEALD, other suitable methods, orcombinations thereof. In some embodiments, ILD layers 252, 254 areformed by a flowable CVD (FCVD) process that includes, for example,depositing a flowable material (such as a liquid compound) oversubstrate 210 and converting the flowable material to a solid materialby a suitable technique, such as thermal annealing and/or treating theflowable material with ultraviolet radiation. Subsequent to thedeposition of ILD layers 252, 254 and/or CESLs 262, 264, a CMP processand/or other planarization process is performed, such that ILD layers252, 254 and/or CESLs 262, 264 have substantially planar surfaces.

ILD layers 252, 254 include a dielectric material including, forexample, silicon oxide, silicon nitride, silicon oxynitride, tetraethylorthosilicate (TEOS) oxide, PSG, BPSG, low-k dielectric material, othersuitable dielectric material, or combinations thereof. Low-k dielectricmaterial generally refers to dielectric materials having a lowdielectric constant relative to the dielectric constant of silicondioxide (k≈3.9). For example, low-k dielectric material has a dielectricconstant less than about 3.9. In some examples, low-k dielectricmaterial has a dielectric constant less than about 2.5, which can bereferred to as extreme low-k dielectric material. Exemplary low-kdielectric materials include fluorosilicate glass (FSG), carbon dopedsilicon oxide, Black Diamond® (Applied Materials of Santa Clara,Calif.), Xerogel, Aerogel, amorphous fluorinated carbon, Parylene, BCB,SILK (Dow Chemical, Midland, Mich.), polyimide, other low-k dielectricmaterial, or combinations thereof. In the depicted embodiment, ILDlayers 252, 254 include a low-k dielectric material and are generallyreferred to as low-k dielectric layers. CESLs 262, 264 include amaterial different than ILD layers 252, 254, such as a dielectricmaterial that is different than the dielectric material of ILD layers252, 254. ILD layers 252, 254 and/or CESLs 262, 264 can include amultilayer structure having multiple dielectric materials. In thedepicted embodiment, where ILD layers 252, 254 include a silicon andoxygen (for example, SiCOH, SiO_(x), or other silicon-and-oxygencomprising material) (and can thus be referred to as silicon oxidelayers), CESLs 262, 264 include silicon and nitrogen and/or carbon (forexample, SiN, SiCN, SiCON, SiON, SiC, and/or SiCO) (and can thus bereferred to as silicon nitride layers).

MLI feature 250 further includes device-level contacts disposed in theinsulating layers. Device-level contacts (also referred to as localinterconnects or local contacts) electrically couple and/or physicallycouple IC device features to other conductive features of MLI feature250 (for example, vias). Device-level contacts (also referred to aslocal interconnects or local contacts) include metal-to-poly (MP)contacts, which generally refer to contacts to a gate structure, such asa poly gate structure or a metal gate structure, and metal-to-device(MD) contacts, which generally refer to contacts to a conductive regionof IC device 200, such as source/drain regions. In FIG. 2, MLI feature250 is depicted with an MD contact, such as an interconnect 270 disposedon epitaxial source/drain feature 240A. Interconnect 270 includes asilicide layer 272, a source/drain contact 274 (including, for example,a contact barrier layer 276 and a contact bulk layer 278), a contactisolation layer 280, and a dummy contact layer 282. Interconnect 270extends through ILD layer 254, CESL 264, ILD layer 252, and CESL 262 toepitaxial source/drain feature 240A. In some embodiments, interconnect270 extends partially into epitaxial source/drain feature 240A, such asdepicted. In some embodiments, interconnect 270 is an MEOL conductivefeature that electrically and/or physically couples an FEOL conductivefeature (for example, epitaxial source/drain feature 240A) to a BEOLconductive feature (for example, a via). The present disclosurecontemplates embodiments where interconnect 270 extends through more orless ILD layers and/or CESLs of MLI feature 250 and embodiments whereinterconnect 270 includes more or less layers depending on designrequirements of interconnect 270 and/or IC device 200.

Silicide layer 272 is disposed on epitaxial source/drain feature 240A.Silicide layer 272 extends through CESL 262. In the depicted embodiment,a top surface of silicide layer 272 is disposed higher than a topsurface of CESL 262 relative to a top surface of substrate 210. In someembodiments, the top surface of silicide layer 272 is disposed lowerand/or substantially planar with the top surface of CESL 262 relative tothe top surface of substrate 210. In some embodiments, the top surfaceof silicide layer 272 is disposed lower than the top surface ofsubstrate 210. Silicide layer 272 may be formed by depositing a metallayer over epitaxial source/drain feature 240A and heating IC device 200(for example, subjecting IC device 200 to an annealing process) to causeconstituents of epitaxial source/drain feature 240A (for example,silicon and/or germanium) to react with metal constituents of the metallayer. The metal layer includes any metal constituent suitable forpromoting silicide formation, such as nickel, platinum, palladium,vanadium, titanium, cobalt, tantalum, ytterbium, zirconium, othersuitable metal, or combinations thereof. Silicide layer 272 thusincludes a metal constituent and a constituent of epitaxial source/drainfeature 240A, such as silicon and/or germanium. For example, silicidelayer 272 includes nickel silicide, titanium silicide, or cobaltsilicide. Any un-reacted metal, such as remaining portions of the metallayer, may be selectively removed relative to silicide layer 272 and/ora dielectric material, for example, by a etching process.

Source/drain contact 274 extends through ILD 254, CESL 264, and ILD 252to silicide layer 272, such that source/drain contact 274 is disposed onsilicide layer 272. In the depicted embodiment, a bottom surface ofsource/drain contact 274 is disposed higher than the top surface of CESL262 relative to the top surface of substrate 210. In some embodiments,the bottom surface of source/drain contact 274 is disposed lower and/orsubstantially planar with the top surface of CESL 262 relative to thetop surface of substrate 210. In some embodiments, the bottom surface ofsource/drain contact 274 is disposed lower than the top surface ofsubstrate 210. Contact barrier layer 276 includes a material thatpromotes adhesion between a dielectric material (here, contact isolationlayer 280) and contact bulk layer 278. For example, contact barrierlayer 276 includes titanium, titanium alloy, tantalum, tantalum alloy,cobalt, cobalt alloy, ruthenium, ruthenium alloy, molybdenum, molybdenumalloy, other suitable constituent configured to promote and/or enhanceadhesion between a metal material and a dielectric material, orcombinations thereof. In some embodiments, contact barrier layer 276includes tantalum and nitrogen (for example, tantalum nitride) ortitanium and nitrogen (for example, titanium nitride). In someembodiments, contact barrier layer 276 includes multiple layers. Forexample, contact barrier layer 276 may include a first sub-layer thatincludes titanium and a second sub-layer that includes titanium nitride.In another example, contact barrier layer 276 may include a firstsub-layer that includes tantalum and a second sub-layer that includestantalum nitride. Contact bulk layer 278 includes tungsten, ruthenium,cobalt, copper, aluminum, iridium, palladium, platinum, nickel, lowresistivity metal constituent, alloys thereof, or combinations thereof.In the depicted embodiment, contact bulk layer 278 includes tungsten orcobalt. In some embodiments, source/drain contact 274 does not includecontact barrier layer 276, such that contact bulk layer 278 physicallycontacts contact isolation layer 280. In some embodiments, source/draincontact 274 is partially barrier-free, where contact barrier layer 276is disposed between contact isolation layer 280 and a portion of contactbulk layer 278. In some embodiments, contact bulk layer 278 includesmultiple layers.

Contact isolation layer 280 surrounds source/drain contact 274. Forexample, contact isolation layer 280 is disposed along and on sidewallsof source/drain contact 274. Contact isolation layer 280 extends throughILD 254, CESL 264, and ILD 252 to silicide layer 272, such that contactisolation layer 280 is disposed on a top surface of silicide layer 272.In some embodiments, depending on design requirements of interconnect270, contact isolation layer extends to CESL 262, such that contactisolation layer 280 is disposed on the top surface of CESL 262. In thedepicted embodiment, contact isolation layer 280 has a substantiallyuniform thickness along sidewalls of source/drain contact 274 andextends along an entirety of sidewalls of source/drain contact 274.However, the present disclosure contemplates embodiments where athickness of contact isolation layer 280 varies (for example, tapers)along sidewalls of source/drain contact 274 and/or where contactisolation layer 280 extends along a portion of sidewalls of source/draincontact 274. In some embodiments, a thickness t1 of contact isolationlayer 280 defined along the x-direction is about 0.5 nm to about 5 nm.In the depicted embodiment, contact isolation layer 280 is anitrogen-comprising layer. For example, contact isolation layer 280includes silicon and nitrogen and optionally carbon, such as SiN, SiCN,carbon-doped SiN, high-density SiN, low-density SiN, othersilicon-and-nitrogen-comprising material, or combinations thereof. Insome embodiments, contact isolation layer 280 is a high-density SiNlayer, while dummy contact layer 282 includes a material thatfacilitates etching selectivity between contact isolation layer 280 anddummy contact layer 282 during subsequent processing, such as silicon,germanium, silicon germanium, polysilicon, amorphous silicon, BSG, PSG,doped silicon (e.g., in-situ doped silicon), other suitable material, orcombinations thereof. In some embodiments, a composition of contactisolation layer 280 is the same as a composition of CESLs 262, 264.

Dummy contact layer 282 surrounds source/drain contact 274. For example,dummy contact layer 282 is disposed along sidewalls of source/draincontact 274 between contact isolation layer 280 and insulating layers ofMLI feature 250 (here, ILD layers 252, 254 and CESL 264). Dummy contactlayer 282 is separated from sidewalls of source/drain contact 274 bycontact isolation layer 280. Dummy contact layer 282 extends through ILD254, CESL 264, and ILD 252 to CESL 262, such that dummy contact layer282 is disposed on the top surface of CESL 262. In the depictedembodiment, dummy contact layer 282 has a substantially uniformthickness along sidewalls of source/drain contact 274. However, thepresent disclosure contemplates embodiments where a thickness of dummycontact layer 282 varies (for example, tapers) along sidewalls ofsource/drain contact 274 and/or where dummy contact layer 282 extendsalong a portion of sidewalls of source/drain contact 274. In someembodiments, a thickness t2 of dummy contact layer 282 defined along thex-direction is about 0.5 nm to about 5 nm. In some embodiments,thickness t2 and a length of dummy contact layer 282 along sidewalls ofsource/drain contact 274 are tailored to control dimensions of an airgap of interconnect 270. A composition of dummy contact layer 282 isdifferent than compositions of layers surrounding dummy contact layer282 (for example, ILD layers 252, 254, CESLs 262, 264, and/or contactisolation layer 280) to achieve etching selectivity during subsequentetching processes, such as those used to form the air gap ofinterconnect 270. In other words, dummy contact layer 282 and itssurrounding layers include materials having distinct etchingsensitivities to a given etchant. For example, dummy contact layer 282includes a material having an etch rate to an etchant that is greaterthan an etch rate of materials of ILD layers 252, 254, CESLs 262, 264,and/or contact isolation layer 280 to the etchant. In some embodiments,materials of dummy contact layer 282 and its surrounding layers aretailored to achieve an etch selectivity (i.e., a ratio of an etch rateof dummy contact layer 282 to an etch rate of its surrounding layers) ofabout 10:1 to about 1,000:1. Dummy contact layer 282 includes silicon,germanium, oxygen, nitrogen, carbon, other suitable constituent, orcombinations thereof. In the depicted embodiment, dummy contact layer282 is a polysilicon layer. In some embodiments, dummy contact layer 282is a silicon layer, a germanium layer, or a silicon germanium layer,which in some embodiments, is doped with a suitable dopant to achievedesired etching selectivity. In some embodiments, dummy contact layer282 is an amorphous silicon layer. In some embodiments, dummy contactlayer 282 is a BSG layer or a PSG layer. In some embodiments, dummycontact layer 282 is a low-density silicon nitride layer, for example,relative to contact isolation layer 280 and/or CESLs 262, 264, one ormore of which may be configured as a high-density silicon nitride layer.In some embodiments, dummy contact layer 282 is a low-density siliconoxide layer, for example, relative to ILD layers 252, 254, one or moreof which may be configured as a high-density silicon oxide layer.Degrees of density to achieve “high-density” and “low-density” can beconfigured to achieve desired etching selectivity for subsequent etchprocesses.

Turning to FIG. 3, dummy contact layer 282 is selectively removed by anetch process to form an air gap 284 of interconnect 270. Air gap 284 isdefined between contact isolation layer 280 and insulating layers of MLIfeature 250 (here, ILD layer 254, CESL 264, and ILD layer 252). In thedepicted embodiment, air gap 284 is a high aspect ratio trench having abottom defined by the top surface of CESL 262 and sidewalls defined bycontact isolation layer 280 and insulating layers of MLI feature 250. Insome embodiments, the bottom and/or the sidewalls of the high aspectratio trench are further defined by silicide layer 272. Accordingly, airgap 284 is disposed along sidewalls of source/drain contact 274 andextends through ILD layer 254, CESL 264, and ILD layer 252 to CESL 262,such that air gap 284 surrounds source/drain contact 274. High aspectratio trench generally refers to a trench having one dimension that issubstantially greater than another dimension. For example, air gap 284has a length 1 (defined along a length-wise direction of source/draincontact 274 (for example, along the z-direction)) and a width w (definedalong a width-wise direction of source/drain contact 274 (for example,along the x-direction)), where length 1 is substantially greater thanwidth w. In some embodiments, a ratio of length 1 to width w is greaterthan about 10. In some embodiments, length 1 is about 10 nm to about 160nm. In some embodiments, width w is about 0.5 nm to about 5 nm. In thedepicted embodiment, width w is substantially the same as thickness t2of removed dummy contact layer 282.

The etch process is configured to selectively remove dummy contact layer282 with respect to ILD layers 252, 254, CESLs 262, 264, and/or contactisolation layer 280. In other words, the etch process substantiallyremoves dummy contact layer 282 but does not remove, or does notsubstantially remove, ILD layers 252, 254, CESLs 262, 264, and/orcontact isolation layer 280. Various etch parameters can be tuned toachieve selective etching of dummy contact layer 282, such as etchantcomposition, etch temperature, etch solution concentration, etch time,etch pressure, source power, radio frequency (RF) bias voltage, RF biaspower, etchant flow rate, other suitable etch parameters, orcombinations thereof. For example, an etchant is selected for theetching process that etches the material of dummy contact layer 282 (inthe depicted embodiment, polysilicon) at a higher rate than the materialof contact isolation layer 280, CESLs 264, 262, and ILD layers 252, 254(in the depicted embodiment, silicon nitride and silicon oxide) (i.e.,the etchant has a high etch selectivity with respect to the material ofdummy contact layer 282). The etch process is a dry etching process, awet etching process, other suitable etching process, or combinationsthereof. A dry etching process may implement a hydrogen-comprising etchgas, an oxygen-comprising etch gas, a fluorine-comprising etch gas (forexample, CF₄, SF₆, CH₂F₂, CHF₃, and/or C₂F₆), a chlorine-comprising etchgas (for example, Cl₂, CHCl₃, CCl₄, and/or BCl₃), a bromine-comprisingetch gas (for example, HBr and/or CHBr₃), an iodine-comprising etch gas,other suitable etch gases and/or etch plasmas, or combinations thereof.A wet etching process may implement a wet etchant solution that includesdiluted hydrofluoric acid (DHF), potassium hydroxide (KOH), ammoniumhydroxide (NH₄OH), ammonia (NH₃), hydrofluoric acid (HF), nitric acid(HNO₃), acetic acid (CH₃COOH), water (H₂O), other suitable wet etchantsolution constituents, or combinations thereof. In some embodiments, theetch process is a multi-step etch process.

Because air has a dielectric constant that is about one (k≈1), which islower than dielectric constants of insulating materials conventionallyimplemented in MLI feature 250 (for example, silicon oxide or siliconnitride), air gap 284 reduces a capacitance between gate structure 230Aand source/drain contact 274 and a capacitance between gate structure230B and source/drain contact 274. As a result, parasitic capacitanceand associated RC delay of IC device 200 is greatly reduced bysurrounding source/drain contact 274 with air gap 284. Further, becauseair gap 284 separates source/drain contact 274 from ILD layers 252, 254and CESLs 262, 264, such that source/drain contact 274 does notphysically contact ILD layers 252, 254 and CESLs 262, 264, air gap 284minimizes (and, in some embodiments, eliminates) metal diffusion fromsource/drain contact 274 into ILD layers 252, 254 and CESLs 262, 264.Source/drain contact 274 can thus be configured without a barrier layer,in some embodiments, which can ease manufacturing requirements and/orreduce resistance associated with interconnect 270. It has been observedthat, sometimes, during subsequent processing, conductive material canenter into air gap 284, negating the foregoing advantages. The presentdisclosure thus proposes air gap sealing techniques below that preserveintegrity of air gap 284, so that IC device 200 can maintain reducedcapacitance and/or resistance characteristics provided by air gap 284.

Turning to FIG. 4, a selective deposition process is performed to forman air gap seal 290 that seals (closes) air gap 284. Air gap seal 290fills a topmost portion of air gap 284, such that materials formed overinterconnect 270 during subsequent processing (for example, materialsfrom insulating layers and/or conductive layers of MLI feature 250) donot seep or enter into air gap 284 and degrade or alter the capacitanceand/or resistance reduction characteristics of IC device 200 provided byair gap 284. In FIG. 4, air gap seal 290 defines a top of air gap 284and reduces length 1 of air gap 284, such that air gap 284 is disposedalong a portion, instead of the entirety, of sidewalls of source/draincontact 274. A composition of air gap seal 290 is different thancompositions of insulating layers of MLI feature (for example, ILDlayers and/or CESLs) to achieve etching selectivity during subsequentetch processes, such as those used to form a via of MLI feature 250 overinterconnect 270. In other words, air gap seal 290 and its surroundinglayers include materials having distinct etching sensitivities to agiven etchant. For example, air gap seal 290 includes a material havingan etch rate to an etchant that is less than an etch rate of materialsof ILD layers and/or CESLs of MLI feature 250 to the etchant. In someembodiments, materials of air gap seal 290 and its surrounding layers (aCESL and an ILD layer subsequently formed over air gap seal 290 and ILDlayer 254) are tailored to achieve an etch selectivity (i.e., a ratio ofan etch rate of air gap seal 290 to an etch rate of its surroundinglayers) of about 1:10 to about 1:1,000. Air gap seal 290 furtherincludes a material that can be selectively deposited on contactisolation layer 280 with respect to ILD layer 254. In the depictedembodiment, air gap seal 290 includes amorphous silicon (a-Si), whichgenerally refers to silicon in non-crystalline form (i.e., having adisordered atomic structure). The present disclosure contemplates airgap seal 290 including other materials that can achieve both theselective deposition characteristics and the selective etchcharacteristics disclosed herein.

The deposition process is configured to selectively grow an air gap sealmaterial (for example, amorphous silicon) on contact isolation layer 280with respect to ILD layer 254. In other words, the air gap seal materialgrows on contact isolation layer 280 but does not grow, or does notsubstantially grow, on ILD layer 254. Preventing (or minimizing) growthof the air gap seal material on ILD layer 254 (and ILD 252) ensures thatthe air gap seal material will not fill air gap 284, such that air gap284 is maintained surrounding source/drain contact 274. In the depictedembodiment, where ILD layer 254 is an oxide layer and contact isolationlayer 280 is a silicon nitride layer, the deposition process isconfigured to selectively grow amorphous silicon on silicon nitridesurfaces but not, or not substantially, on oxide surfaces. For example,since ILD layer 254 and contact isolation layer 280 have differentbonding surfaces (in some embodiments, ILD layer 254 has dangling —OHbonds while contact isolation layer 280 has dangling —NH bonds), thedeposition process exposes surfaces of contact isolation layer 280 andILD layer 254 to a silicon-comprising precursor gas that can nucleateand grow more quickly on silicon nitride surfaces (i.e., contactisolation layer 280) than oxide surfaces (i.e., ILD layer 254). Thedeposition process is CVD, ALD, PECVD, PEALD, LPCVD, other suitableprocess, or combinations thereof. In some embodiments, thesilicon-comprising precursor gas includes silane (SiH₄), which cannucleate and grow on both silicon nitride surfaces and oxide surfacesbut will nucleate and grow more quickly on silicon nitride surfaces. Insome embodiments, the silicon-comprising precursor gas includes silane(SiH₄), disilane (Si₂H₆), trisilane (Si₃H₈), tetrasilane (Si₄H₁₀),dichlorosilane (DCS), other silicon-comprising precursor gas, orcombinations thereof. In some embodiments, the deposition processfurther exposes surfaces of contact isolation layer 280 and ILD layer254 to an etching gas that can enhance selective growth of the air gapseal material on silicon nitride surfaces. For example, the etching gasmay remove poorly nucleated air gap seal material on silicon oxidesurfaces more quickly than well nucleated air gap seal material onsilicon nitride surfaces. In some embodiments, the etching gas includesa hydrogen-comprising etch gas (for example, H₂ and/or NH₃), afluorine-comprising etch gas (for example, HF, F₂, NF₃, CF₄, SF₆, CH₂F₂,CHF₃, and/or C₂F₆), a chlorine-comprising etch gas (e.g., Cl₂, CHCl₃,CCl₄, and/or BCl₃), an oxygen-comprising etch gas (for example, 02), abromine-comprising etch gas (e.g., HBr and/or CHBr₃), aniodine-comprising etch gas, other suitable etch gases and/or etchplasmas, or combinations thereof. In some embodiments, the depositionprocess can use a carrier gas for delivering the silicon-comprisingprecursor gas, the etching gas, and/or other gas. In some embodiments,the carrier gas includes nitrogen (N₂), argon (Ar), helium (He), xenon(Xe), other suitable carrier gas constituent, or combinations thereof.The deposition process can involve supplying the silicon-comprisingprecursor gas and the etching gas to the surfaces of IC device 200simultaneously and/or sequentially (for example, cyclically supplyingthe silicon-comprising precursor gas and the etching gas).

Various parameters of the deposition process can be tuned to achievedesired growth characteristics of the air gap seal material, such as aflow rate of a deposition gas (including the silicon-comprisingprecursor gas, the carrier gas, and/or the etching gas), a concentration(or dosage) of the silicon-comprising precursor gas, a concentration (ordosage) of the carrier gas, a concentration (or dosage) of the etchinggas, a ratio of the concentration of the silicon-comprising precursorgas to the concentration of the carrier gas, a ratio of theconcentration of the silicon-comprising precursor gas to theconcentration of the etching gas, a ratio of the concentration of thecarrier gas to the concentration of the etching gas, a power of aradiofrequency (RF) source (for example, used during the depositionprocess to generate a plasma), a bias voltage (for example, appliedduring the deposition process to excite the plasma), a pressure (forexample, of a chamber in which the deposition process is performed on ICdevice 200), a duration of the deposition process, other suitabledeposition parameters, or combinations thereof. For example, a durationof the deposition process, a flow rate of the deposition gas, atemperature of the deposition process, and a pressure of the depositionprocess are tailored to ensure that the air gap seal material grows(deposits) more quickly on silicon nitride surfaces (i.e., contactisolation layer 280) than oxide surfaces (i.e., ILD layer 254). In someembodiments, the duration of the deposition process is about 1 minute toabout 30 minutes. In some embodiments, a flow rate of the deposition gasis about 10 sccm (standard cubic centimeters) to about 20,000 sccm. Insome embodiments, the deposition process implements a ratio of a flowrate of a precursor gas to a flow rate of a carrier gas of about 0.001to about 0.5. In some embodiments, the deposition process is performedat a pressure of about 0.01 Torr to about 100 Torr. In some embodiments,the deposition process is a low temperature deposition process, forexample, performed at a temperature less than about 700° C. In someembodiments, the temperature is about room temperature (for example,about 20° C. to about 25° C.) to about 700° C. In some embodiments, thevarious parameters of the deposition process are configured to achieveda deposition rate of air gap seal material on silicon nitride surfacesthat is greater than an etch rate of air gap seal material on siliconnitride surfaces and a deposition rate of the air gap seal material onsilicon oxide surfaces that is the same as an etch rate of air gap sealmaterial on silicon oxide surfaces, such that the air gap seal material(for example, amorphous silicon) is deposited on silicon nitridesurfaces (for example, contact isolation layer 280) but not deposited onsilicon oxide surfaces (for example, ILD layer 254).

The deposition process is performed until air gap seal 290 fills a topportion of air gap 284 and extends above a top surface 292 of ILD layer254. In the depicted embodiment, air gap seal 290 has threeportions—segment A having a thickness to defined along the x-direction,segment B having a thickness tb defined along the x-direction, andsegment C having a thickness tc defined along the x-direction. Segment Aand segment B combine to form a portion of air gap seal 290 having athickness t3 defined along the z-direction that is disposed below topsurface 292 of ILD layer 254, and segment C is a portion of air gap seal290 having a thickness t4 defined along the z-direction that is disposedabove top surface 292 of ILD layer 254. Such configuration resultsbecause the deposition process can be tuned to selectively deposit theair gap seal material on contact isolation layer 280 and because air gap284 is a high aspect ratio trench. For example, during the depositionprocess, the deposition gas will contact surfaces of contact isolationlayer 280 defining the top portion of air gap 284 more quickly thansurfaces of contact isolation layer 280 defining a bottom portion of airgap 284. Air gap seal material may thus grow from surfaces of contactisolation layer 280 in a manner that fills the top portion of air gap284 before the air gap seal material can nucleate and grow on surfacesof contact isolation layer 280 defining the bottom portion of air gap284. In some embodiments, air gap seal 290 is formed before thedeposition gas is able to reach surfaces of contact isolation layer 280defining the bottom portion of air gap 284. In some embodiments,thickness t3 is about 1 nm to about 5 nm, and thickness t4 is about 0.5nm to about 5 nm. In some embodiments, a total thickness t5 of air gapseal 290 along the z-direction is about 1.5 nm to about 10 nm.

Segment A, having a substantially uniform thickness, completely fills atopmost portion of air gap 284 defined between contact isolation layer280 and ILD layer 254. For example, thickness ta is substantially thesame as width w of air gap 284 along sidewalls of source/drain contact274, such as about 0.5 nm to about 5 nm. Segment B, having a taperedthickness, partially fills a portion of air gap 284 defined betweencontact isolation layer 280 and ILD layer 254. For example, thickness tbtapers along sidewalls of source/drain contact 274 from a thickness thatis substantially the same as width w of air gap 284 to a thickness thatis less than width w of air gap 284. For example, thickness tb decreasesfrom a first thickness proximate to a second thickness that is less thanthe first thickness. In some embodiments, thickness tb decreases fromabout 0.5 nm to about 5 nm to zero along sidewalls of source/draincontact 274 towards a top surface of substrate 210. Segment C, having athickness that is greater than width w of air gap 284, is disposed on atop surface 294 of contact isolation layer 280 but not on top surface292 of ILD 254. For example, thickness tc is greater than ta. In thedepicted embodiment, segment C covers an entirety of top surface 294 ofcontact isolation layer 280, though the present disclosure contemplatesembodiments where segment C covers a portion of top surface 294 ofcontact isolation layer 280. In some embodiments, segment C growslaterally to cover a portion of a top surface of source/drain contact274, such as a portion or entirety of a top surface of barrier layer 276of source/drain contact 274. In some embodiments, thickness tc issubstantially the same as width w of air gap 284, such that segment C isnot disposed on top surface 294 of contact isolation layer 280 or topsurface 292 of ILD layer 254. Further, because air gap seal material ofsegment C is not confined between contact isolation layer 280 and ILDlayer 254, a top surface 296 of air gap seal 290 may be curvilinear, insome embodiments.

Turning to FIG. 5, an insulating layer of MLI feature 250 is formed overair gap seal 290, interconnect 270, and ILD layer 254. For example, aCESL 300 is deposited over air gap seal 290, interconnect 270, and ILDlayer 254, and an ILD layer 310 is deposited over CESL 300. A thicknesst6 of CESL 300 defined along the z-direction is greater than thicknesst4 of segment C of air gap seal 290, such that CESL 300 is disposed overand covers top surface 296 of air gap seal 290. In some embodiments,thickness t6 is about 1 nm to about 10 nm. In some embodiments, athickness t7 of ILD layer 310 defined along the z-direction is about 2nm to about 50 nm. CESL 300 and ILD layer 310 include differentcompositions and/or materials to achieve etching selectivity. Forexample, CESL 300 includes a dielectric material that is different thana dielectric material of ILD layer 310. In some embodiments, CESL 300includes silicon and nitrogen and/or carbon (for example, SiN, SiCN,SiCON, SiON, SiC, and/or SiCO). In some embodiments, CESL 300 includes ametal oxide, such as AlOx, AlZrOx, ZrOx, other suitable metal oxide, orcombinations thereof. In addition to providing an etch stop, CESL 300may also improve etching uniformity. In some embodiments, ILD layer 310includes silicon oxide, silicon nitride, silicon oxynitride, TEOS-formedoxide, PSG, BPSG, low-k dielectric material, other suitable dielectricmaterial, or combinations thereof. Exemplary low-k dielectric materialsinclude FSG, carbon doped silicon oxide, Black Diamond® (AppliedMaterials of Santa Clara, Calif.), Xerogel, Aerogel, amorphousfluorinated carbon, Parylene, BCB, SILK (Dow Chemical, Midland, Mich.),polyimide, other low-k dielectric material, or combinations thereof.CESL 300 and/or ILD layer 310 can include a multilayer structure havingmultiple dielectric materials. In the depicted embodiment, CESL 300includes silicon and nitrogen (and is thus referred to as a siliconnitride layer) and ILD layer 310 includes silicon and oxygen, such asSiCOH, SiO_(x), or other silicon-and-oxygen comprising material (and isthus referred to as a silicon oxide layer). CESL 300 and ILD layer 310are formed by a deposition process, such as CVD, PVD, ALD, HDPCVD,MOCVD, RPCVD, PECVD, LPCVD, ALCVD, APCVD, FCVD, PEALD, other suitablemethods, or combinations thereof. Subsequent to the deposition of CESL300 and/or ILD layer 310, a CMP process and/or other planarizationprocess is performed, such that CESL 300 and/or ILD layer 310 havesubstantially planar surfaces.

Turning to FIG. 6, the insulating layer of MLI feature 250 is patternedto form an interconnect opening that exposes interconnect 270. Viaopening 320 extends through ILD layer 310 and CESL 300 to exposeinterconnect 270, particularly source/drain contact 274. Via opening 320has sidewalls defined by ILD layer 310 and CESL 300 and a bottom definedby interconnect 270. Because air gap seal 290 has segment C above topsurface 292 of ILD layer 254, via opening 320 is further defined by andexposes air gap seal 290. In FIG. 6, via opening 320 has a trapezoidalshape, though the present disclosure contemplates via opening 320 havingother shapes, such as a rectangular shape. In some embodiments, formingvia opening 320 includes performing a lithography process to form apatterned mask layer 330 (having an opening 335 therein that overlapsinterconnect 270) over ILD layer 310 and performing an etching processto transfer a pattern defined in patterned mask layer 330 to ILD layer310 and CESL 300. The lithography process can include forming a resistlayer on ILD layer 310 (for example, by spin coating), performing apre-exposure baking process, performing an exposure process using amask, performing a post-exposure baking process, and performing adeveloping process. During the exposure process, the resist layer isexposed to radiation energy (such as ultraviolet (UV) light, deep UV(DUV) light, or extreme UV (EUV) light), where the mask blocks,transmits, and/or reflects radiation to the resist layer depending on amask pattern of the mask and/or mask type (for example, binary mask,phase shift mask, or EUV mask), such that an image is projected onto theresist layer that corresponds with the mask pattern. Since the resistlayer is sensitive to radiation energy, exposed portions of the resistlayer chemically change, and exposed (or non-exposed) portions of theresist layer are dissolved during the developing process depending oncharacteristics of the resist layer and characteristics of a developingsolution used in the developing process. After development, thepatterned resist layer includes a resist pattern (for example, anopening that overlaps interconnect 270) that corresponds with the mask.In some embodiments, the patterned resist layer is patterned mask layer330. In some embodiments, the patterned resist layer is formed over amask layer deposited over ILD layer 310, and the patterned resist layeris used as an etch mask to remove portions of the mask layer, therebyforming patterned mask layer 330. Alternatively, the exposure processcan be implemented or replaced by other methods, such as masklesslithography, electron-beam writing, ion-beam writing, and/or nanoimprinttechnology.

The etch process uses patterned mask layer 330 as an etch mask to removeportions of ILD layer 310 and/or CESL 300, thereby exposing interconnect270 (for example, source/drain contact 274). The etch process isconfigured to selectively remove ILD layer 310 and CESL 300 with respectto air gap seal 290 and source/drain contact 274. In other words, theetch process substantially removes ILD layer 310 and CESL 300 but doesnot remove, or does not substantially remove, air gap seal 290 andsource/drain contact 274. Various etch parameters can be tuned toachieve selective etching of ILD layer 310 and CESL 300, such as etchantcomposition, etch temperature, etch solution concentration, etch time,etch pressure, source power, RF bias voltage, RF bias power, etchantflow rate, other suitable etch parameters, or combinations thereof. Forexample, an etchant is selected for the etching process that etches thematerial of ILD layer 310 and CESL 300 (in the depicted embodiment,silicon oxide and silicon nitride) at a higher rate than the material ofair gap seal 290 and source/drain contact 274 (in the depictedembodiment, amorphous silicon and metal) (i.e., the etchant has a highetch selectivity with respect to the material of ILD layer 310 and CESL300). The etch process is a dry etching process, a wet etching process,other suitable etching process, or combinations thereof. A dry etchingprocess may implement a hydrogen-comprising etch gas, anoxygen-comprising etch gas, a fluorine-comprising etch gas (for example,CF₄, SF₆, CH₂F₂, CHF₃, and/or C₂F₆), a chlorine-comprising etch gas (forexample, Cl₂, CHCl₃, CCl₄, and/or BCl₃), a bromine-comprising etch gas(for example, HBr and/or CHBr₃), an iodine-comprising etch gas, othersuitable etch gases and/or etch plasmas, or combinations thereof. A wetetching process may implement a wet etchant solution that includes DHF,KOH, NH₄OH, NH₃, HF, HNO₃, CH₃COOH, H₂O, other suitable wet etchantsolution constituents, or combinations thereof. In some embodiments, theetch process is a multi-step etch process that includes a first etchstep that selectively etches ILD 310 and a second etch step thatselectively etches CESL 300. For example, the first etch step isconfigured to remove ILD layer 310 but not remove, or not substantiallyremove, CESL 300, while the second etch step is configured to removeCESL 300 but not remove, or not substantially remove, ILD 310, air gapseal 290, and source/drain contact 274. In some embodiments, the firstetch step is a dry etching process that utilizes an etch gas thatincludes CF₄, O₂, and/or N₂ to selectively etch ILD layer 310. In suchembodiments, a ratio of CH₄ to O₂ and/or N₂, an etch temperature, and/oran RF power may be tuned to achieve desired etch selectively. In someembodiments, the first etch step is a wet etching process that utilizesa wet etchant solution that includes HF to selectively etch ILD layer310. In such embodiments, an etch temperature and/or an etch time (forexample, how long IC device 200 is submersed in the wet etchantsolution) may be tuned to achieve desired etch selectively. In someembodiments, the second etch step is a dry etching process that utilizesan etch gas that includes SF₆, CH₄, H₂, O₂, and/or N₂ to selectivelyetch CESL 300. In such embodiments, a ratio of SF₆ to CH₄, O₂, and/orN₂, a ratio of CH₄ to H₂, O₂, and/or N₂, an etch temperature, and/or anRF power may be tuned to achieve desired etch selectively. In someembodiments, the second etch step is a wet etching process that utilizesa wet etchant solution that includes H₃PO₄ and H₂O to selectively etchCESL 300. In such embodiments, a ratio of the H₃PO₄ to H₂O, an etchtemperature, and/or an etch time (for example, how long IC device 200 issubmersed in the wet etchant solution) may be tuned to achieve desiredetch selectively. In some embodiments, after the etching process,patterned mask layer 330 is removed from ILD layer 310 (in someembodiments, by a resist stripping process). In some embodiments,patterned mask layer 330 is removed during etching of ILD layer 310and/or CESL 300.

Because air gap seal 290 and the insulating layer of MLI feature 250(here, ILD layer 310 and CESL 300) include materials that facilitatehigh etching selectivity during formation of via opening 320, air gapseal 290 remains intact and preserves reliability of air gap 284 forcapacitance and/or resistance reduction purposes. For example, air gapseal 290 can withstand misalignment issues and/or over-size interconnectissues that sometimes arise when forming a via to interconnect 270. Withmisalignment issues, via opening 320 may not align and/or overlayinterconnect 270, as depicted, and instead may be shifted left or right,such that via opening 320 significantly overlaps air spacer 284 andexposes portions of air gap seal 290 that close air spacer 284. Withover-size interconnect issues, a width of a via is intentionally (or,sometimes, unintentionally) configured wider than interconnect 270, suchthat via opening 320 significantly overlaps air spacer 284 and exposesportions of air gap seal 290 that close air spacer 284. With bothissues, conventional air gap seals, which often include materials thatdo not facilitate sufficiently high etching selectivity, may be removedduring the etching processes used to form via opening 320, therebyexposing air gap 284 to conductive materials subsequently deposited invia opening 320. In contrast, in the depicted embodiment, because airgap seal 290 includes amorphous silicon and the etching process used toform via opening 320 has a high etching selectivity, air gap seal 290remains intact during formation of via opening 320. Air gap seal 290thus effectively prevents conductive materials (for example, metal) fromentering air gap 284, such as those deposited in via opening 320 to formthe via over interconnect 270.

Turning to FIG. 7, an interconnect is formed in the interconnectopening. For example, a via 340 is formed in via opening 320. Via 340extends through ILD layer 310 and CESL 300 to source/drain contact 274,though the present disclosure contemplates embodiments where via 340extends through more than one ILD layer and/or CESL of MLI feature 250.In the depicted embodiment, via 340 is disposed on source/drain contact274 and air gap seal 290 (in particular, on a portion of top surface 296of air gap seal 290), and a portion of via 340 is disposed between airgap seal 290. Via 340 electrically couples and/or physically couplessource/drain contact 274 to a conductive feature of MLI feature 250,such as a conductive line of a metal layer of MLI feature 250 (forexample, a metal one (M1) layer). Via 340 is formed by any suitableprocess and has any suitable configuration. For example, one or moreconductive layers (for example, metal layers) are deposited in viaopening 320. In some embodiments, via 340 includes a via barrier layer(also referred to as a via liner layer) and a via bulk layer. In suchembodiments, the via barrier layer is deposited over surfaces of ILDlayer 310, CESL 300, air gap seal 290, and source/drain contact 274 thatdefine via opening 320, and the via bulk layer is deposited over the viabarrier layer. The via barrier layer may partially fill via opening 320,and in some embodiments, is conformally deposited, such that a thicknessof the via barrier layer is substantially uniform along the varioussurfaces defining via opening 320. The via bulk layer may fill aremaining portion of via opening 320. In some embodiments, the viabarrier layer and/or the via bulk layer are deposited by PVD, CVD, ALD,electroplating, electroless plating, other suitable deposition process,or combinations thereof. Thereafter, any excess conductive material(s)(for example, any of the via barrier layer and/or the via bulk layerthat are disposed over a top surface of ILD layer 310) can be removed bya planarization process, such as a CMP process, thereby planarizing atop surface of ILD layer 310 and via 340.

The via barrier layer includes a material that promotes adhesion betweena dielectric material (here, ILD layer 310 and/or CESL 300) and the viabulk layer. For example, the via barrier layer includes titanium,titanium alloy, tantalum, tantalum alloy, cobalt, cobalt alloy,ruthenium, ruthenium alloy, molybdenum, molybdenum alloy, other suitableconstituent configured to promote and/or enhance adhesion between ametal material and a dielectric material, or combinations thereof. Insome embodiments, the via barrier layer includes tantalum and nitrogen(for example, tantalum nitride) or titanium and nitrogen (for example,titanium nitride). In some embodiments, the via barrier layer includesmultiple layers. For example, the via barrier layer may include a firstsub-layer that includes titanium and a second sub-layer that includestitanium nitride. In another example, the via barrier layer may includea first sub-layer that includes tantalum and a second sub-layer thatincludes tantalum nitride. The via bulk layer includes tungsten,ruthenium, cobalt, copper, aluminum, iridium, palladium, platinum,nickel, low resistivity metal constituent, alloys thereof, orcombinations thereof. In some embodiments, via 340 is a barrier-freevia, and thus includes only the via bulk layer. In some embodiments, via340 is a partially barrier-free via, and thus includes via barrier layerbetween only a portion of the via bulk layer and its surrounding layers(for example, ILD layer 310, CESL 300, air gap seal 290, and/orsource/drain contact 274).

Turning to FIG. 8A and FIG. 8B, in some embodiments, to further reducecapacitance and/or resistance between source/drain contact 274 and gatestructures 230A, 230B, air gap seal 290 undergoes oxidation beforeforming via 340. For example, in FIG. 8A, after forming via opening 320,an oxidation process is performed to oxidize air gap seal 290, therebyforming oxidized air gap seal 290-1. In some embodiments, oxidized airgap seal 290-1 is partially oxidized, such that oxidized air gap seal290-1 includes amorphous silicon portions and silicon oxide portions. Insome embodiments, oxidized air gap seal 290-1 is completely oxidized,such that oxidized air gap seal 290-1 includes silicon oxide and is freeof amorphous silicon. In some embodiments, the oxidation processincludes performing a thermal treatment that oxidizes air gap seal 290.For example, air gap seal 290 is exposed to a temperature of about roomtemperature (for example, about 20° C. to about 25° C.) to about 700° C.In some embodiments, the oxidation process includes performing a plasmatreatment that oxidizes air gap seal 290. For example, air gap seal 290is exposed to an oxygen-comprising plasma, such as a nitrous oxide (N₂O)plasma. In some embodiments, the plasma treatment is performed for at atemperature of about room temperature to about 500° C. In someembodiments, the oxygen-comprising plasma is generated by electroncyclotron resonance (ECR) techniques or RF techniques. In someembodiments, the oxidation process includes performing an ozonated water(DIO₃) clean treatment that oxidizes air gap seal 290. For example, airgap seal 290 is exposed to a solution of ozone in deionized water. Insome embodiments, the DIO₃ clean treatment partially oxidizes air gapseal 290, such as an outer portion of air gap seal 290, such that airgap seal 290-1 includes an outer silicon oxide portion, such as an outersilicon oxide layer, and an inner amorphous silicon portion. In someembodiments, the outer silicon oxide portion is formed only on portionsof the air gap seal 290 that are exposed by via opening 320. Forexample, in some embodiments, the outer silicon oxide portion isdisposed along only the portion of top surface 296 exposed by viaopening 320. In some embodiments, a thickness of the outer silicon oxidelayer is less than about 0.5 nm. In some embodiments, the DIO₃ cleantreatment is performed at a temperature of about room temperature toabout 100° C. In some embodiments, the DIO₃ clean treatment is performedfor a time of about 10 seconds to about 10 minutes.

The present disclosure provides for many different embodiments.Interconnects that facilitate reduced capacitance and/or resistance andcorresponding techniques for forming the interconnects are disclosedherein. An exemplary interconnect is disposed in an insulating layer.The interconnect has a metal contact, a contact isolation layersurrounding sidewalls of the metal contact, and an air gap disposedbetween the contact isolation layer and the insulating layer. An air gapseal for the air gap has a first portion disposed over a top surface ofthe contact isolation layer, but not disposed on a top surface of theinsulating layer, and a second portion disposed between the contactisolation layer and the insulating layer, such that the second portionsurrounds a top portion of sidewalls of the metal contact. The air gapseal may include amorphous silicon and/or silicon oxide. The contactisolation layer may include silicon nitride. The insulating layer mayinclude silicon oxide. In some embodiments, the second portion of theair gap seal has a first segment disposed over a second segment. Thefirst segment may have a substantially uniform thickness and the secondsegment may have a tapered thickness.

In some embodiments, the insulating layer includes a first etch stoplayer, a first interlayer dielectric layer disposed over the first etchstop layer, a second etch stop layer disposed over the first interlayerdielectric layer, and a second interlayer dielectric layer disposed overthe second contact etch stop layer. In such embodiments, the air gapextends through the second interlayer dielectric layer, the second etchstop layer, and the first interlayer dielectric layer to the first etchstop layer. In such embodiments, the second portion of the air gap sealis disposed between the contact isolation layer and the secondinterlayer dielectric layer. In some embodiments, the device furtherincludes a third etch stop layer disposed over the second interlayerdielectric layer and a third interlayer dielectric layer disposed overthe third etch stop layer. In such embodiments, a top surface of the airgap seal may be lower than a top surface of the third etch stop layer.In some embodiments, the interconnect is a first interconnect, and thedevice further includes a second interconnect disposed on the firstinterconnect. In such embodiments, the first portion of the air gap sealmay be disposed between the contact isolation layer and the secondinterconnect. In such embodiments, the first portion of the air gap sealmay further be disposed between a portion of the metal contact and thesecond interconnect.

An exemplary device includes a first insulating layer disposed over asubstrate and a device-level contact disposed in the first insulatinglayer. A dielectric layer is disposed along sidewalls of thedevice-level contact. An air gap seal is disposed between the firstinsulating layer and a first portion of the dielectric layer that isdisposed along the sidewalls of the device-level contact. An air gap isdisposed between the first insulating layer, a second portion of thedielectric layer that is disposed along the sidewalls of thedevice-level contact, and the air gap seal. The device further includesa second insulating layer disposed over the first insulating layer, thedevice-level contact, the dielectric layer, and the air gap seal. A viais disposed in the second insulating layer over the device-levelcontact. In such embodiments, a material of the air gap seal isdifferent than a material of the dielectric layer, a material of thefirst insulating layer, and a material of the second insulating layer.In some embodiments, the material of the air gap seal includes amorphoussilicon, the material of the dielectric layer includes silicon andnitrogen, the material of the first insulating layer includes siliconand oxygen, and the material of the second insulating layer includessilicon and oxygen. In some embodiments, the material of the air gapseal includes a first portion that includes the amorphous silicon and asecond portion that includes silicon and oxygen. In some embodiments,the air gap seal is disposed over a top surface of the dielectric layerwhile a top surface of the first insulating layer is free of the air gapseal. In some embodiments, the second insulating layer includes acontact etch stop layer (CESL) and an interlayer dielectric layer (ILD)disposed over the CESL. In some embodiments, the CESL physicallycontacts a portion of a top surface of the air gap seal. In someembodiments, a thickness of the air gap seal defined between a topsurface of the first insulating layer and the top surface of the air gapseal is less than a thickness of the CESL.

An exemplary method includes forming an interconnect in a firstinsulating layer. The interconnect includes a metal contact, a contactisolation layer disposed along sidewalls of the metal contact, and adummy contact layer disposed along the sidewalls of the metal contact.The dummy contact layer is disposed between the first insulating layerand the contact isolation layer. The method further includes removingthe dummy contact layer from the interconnect to form an air gap alongthe sidewalls of the metal contact. The air gap is disposed between thefirst insulating layer and the contact isolation layer. The methodfurther includes sealing the air gap by performing a deposition processthat selectively deposits an air gap seal material on the contactisolation layer without depositing the air gap seal material on thefirst insulating layer. In some embodiments, the interconnect is a firstinterconnect, and the method further includes, after sealing the airgap, forming a second insulating layer over the first interconnect andthe first insulating layer. The method further includes forming aninterconnect opening in the second insulating layer that exposes thefirst interconnect and forming a second interconnect in the interconnectopening. In some embodiments, the method further includes oxidizing atleast a portion of the air gap seal material before forming the secondinterconnect. In some embodiments, forming the interconnect openingincludes etching the second insulating layer without etching the air gapseal material. In some embodiments, performing the deposition processthat selectively deposits the air gap seal material on the contactisolation layer without depositing the air gap seal material on thefirst insulating layer includes forming amorphous silicon on siliconnitride surfaces.

Another exemplary device includes a first insulating layer disposed overa substrate; a source/drain contact disposed in the first insulatinglayer; an isolation layer disposed along sidewalls of the source/draincontact; an air gap seal disposed between the first insulating layer anda first portion of the isolation layer disposed along the sidewalls ofthe source/drain contact; an air gap disposed between the firstinsulating layer, a second portion of the isolation layer disposed alongthe sidewalls of the source/drain contact, and the air gap seal; asecond insulating layer disposed over the source/drain contact, theisolation layer, the first insulating layer, and the air gap seal; and avia disposed in the second insulating layer over the source/draincontact. In some embodiments, a material of the air gap seal isdifferent than a material of the isolation layer, a material of thefirst insulating layer, and a material of the second insulating layer.

In some embodiments, the material of the air gap seal includes amorphoussilicon, the material of the isolation layer includes silicon andnitrogen, the material of the first insulating layer includes siliconand oxygen, and the material of the second insulating layer includessilicon and oxygen. In some embodiments, the air gap seal is disposedover a top surface of the isolation layer while a top surface of thefirst insulating layer is free of the air gap seal. In some embodiments,a portion of the air gap seal has a thickness that is substantiallyequal to a width of the air gap. In some embodiments, the via contactsthe air gap seal. In some embodiments, the air gap seal has a taperedbottom surface, such that the air gap seal has a tapered thickness. Insome embodiments, the second insulating layer includes a contact etchstop layer (CESL) and an interlayer dielectric layer (ILD) disposed overthe CESL, wherein the CESL contacts the air gap seal. In someembodiments, a thickness of the air gap seal defined between a topsurface of the first insulating layer and a top surface of the air gapseal is less than a thickness of the CESL.

Another exemplary method includes forming a source/drain contactstructure in a first insulating layer, wherein the source/drain contactstructure includes a source/drain contact, an isolation layer disposedalong sidewalls of the source/drain contact, and a dummy layer disposedalong the isolation layer, such that the dummy layer is disposed betweenthe first insulating layer and the isolation layer; forming an air gapby removing the dummy layer, wherein the air gap is disposed between thefirst insulating layer and the isolation layer; forming an air gap sealover the air gap by depositing an air gap seal material on the isolationlayer, wherein the air gap seal material is different than a material ofthe isolation layer and a material of the first insulating layer;forming a second insulating layer over the source/drain contactstructure, the first insulating layer, and the air gap seal, wherein amaterial of the second insulating layer is different than the materialof the air gap seal material; and forming a via in the second insulatinglayer, wherein the via is disposed over and contacts the source/draincontact. In some embodiments, forming the via includes performing anetching process that etches the second insulating layer without etchingthe air gap seal to form a via trench exposing the source/drain contact,and filling the via trench with metal. In some embodiments, an etch rateof the material of the second insulating layer to an etchant of theetching process is greater than an etch rate of the air gap sealmaterial of the air gap seal to the etchant of the etching process. Insome embodiments, the method further includes oxidizing at least aportion of the air gap seal before filling the via trench. In someembodiments, forming the air gap seal over the air gap by depositing theair gap seal material on the isolation layer includes selectivelygrowing the air gap seal material on the isolation layer without growingthe air gap seal material on the first insulating layer. In someembodiments, the air gap seal material includes amorphous silicon, thematerial of the isolation layer includes silicon and nitrogen, and thematerial of the first insulating layer includes silicon and oxygen. Insome embodiments, forming the air gap by removing the dummy layerincludes performing an etching process that etches the dummy layerwithout etching the isolation layer and the first insulating layer. Insome embodiments, forming the air gap seal over the air gap bydepositing the air gap seal material on the isolation layer includesfilling a top portion of the air gap, such that the air gap sealmaterial fills a portion of the air gap.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: forming an interconnect inan insulating layer, wherein the interconnect includes a metal contact,a contact isolation layer disposed along sidewalls of the metal contact,and a dummy contact layer disposed along the sidewalls of the metalcontact, wherein the dummy contact layer is disposed between theinsulating layer and the contact isolation layer; removing the dummycontact layer from the interconnect to form an air gap along thesidewalls of the metal contact, wherein the air gap is disposed betweenthe insulating layer and the contact isolation layer; and sealing theair gap by performing a deposition process that selectively deposits anair gap seal material on the contact isolation layer without depositingthe air gap seal material on the insulating layer.
 2. The method ofclaim 1, further comprising performing an oxidation process to oxidizeat least a portion of the air gap seal material.
 3. The method of claim1, wherein the performing the deposition process that selectivelydeposits the air gap seal material on the contact isolation layerincludes forming amorphous silicon on silicon nitride surfaces.
 4. Themethod of claim 1, wherein the removing the dummy contact layerincludes: etching the dummy contact layer without etching the contactisolation layer and the insulating layer; and wherein an etch rate ofthe dummy contact layer to an etch rate of the contact isolation layeris about 10:1 to about 1,000:1 and an etch rate of the dummy contactlayer to an etch rate of the insulating layer is about 10:1 to about1,000:1
 5. The method of claim 1, wherein: a first portion of the airgap seal material disposed between the contact isolation layer and theinsulation layer has a substantially uniform thickness; a second portionof the air gap seal material disposed between the contact isolationlayer and the insulation layer has a tapered thickness; and the firstportion is over the second portion.
 6. The method of claim 1, whereinthe interconnect is a first interconnect, the insulating layer is afirst insulating layer, and the method further comprises: after thesealing the air gap, forming a second insulating layer over the firstinterconnect, the air gap seal material, and the first insulating layer;forming an interconnect opening in the second insulating layer thatexposes the first interconnect; and forming a second interconnect in theinterconnect opening.
 7. The method of claim 6, further comprisingoxidizing at least a portion of the air gap seal material before formingthe second interconnect.
 8. The method of claim 6, wherein the formingthe interconnect opening includes etching the second insulating layerwithout etching the air gap seal material.
 9. The method of claim 8,wherein an etch rate of the air gap seal material to an etch rate of thesecond insulating layer is about 1:10 to about 1:1,000.
 10. A methodcomprising: forming a device-level contact in a first insulating layer,wherein a dielectric layer and a sacrificial layer are between sidewallsof the device-level contact and the first insulating layer; selectivelyremoving the sacrificial layer to form an air gap between the firstinsulating layer and the dielectric layer; selectively depositing an airgap seal between the first insulating layer and a first portion of thedielectric layer, wherein the air gap remains between the firstinsulating layer and a second portion of the dielectric layer; forming asecond insulating layer over the first insulating layer, thedevice-level contact, the dielectric layer, and the air gap seal;forming a via in the second insulating layer over the device-levelcontact; and wherein a material of the air gap seal is different than amaterial of the dielectric layer, a material of the first insulatinglayer, and a material of the second insulating layer.
 11. The method ofclaim 10, wherein the material of the air gap seal includes amorphoussilicon, the material of the dielectric layer includes silicon andnitrogen, the material of the first insulating layer includes siliconand oxygen, and the material of the second insulating layer includessilicon and oxygen.
 12. The method of claim 10, wherein the selectivelydepositing the air gap seal includes performing a chemical vapordeposition (CVD) process and tuning parameters of the CVD process togrow an air gap seal material on surfaces of the dielectric layer fasterthan on surfaces of the first insulating layer.
 13. The method of claim12, wherein the CVD process uses a silane precursor.
 14. The method ofclaim 10, wherein the air gap seal has a portion above the firstinsulating layer having a first thickness and the forming the secondinsulating layer includes: forming a contact etch stop layer (CESL)having a second thickness, wherein the second thickness is greater thanthe first thickness; and forming an interlayer dielectric layer (ILD)over the CESL.
 15. The method of claim 10, further comprising performingan oxidation process on the air gap seal before forming the via.
 16. Amethod comprising: forming a source/drain contact structure that extendsthrough a first dielectric layer to an epitaxial source/drain structure;removing a portion of the source/drain contact structure to form an airgap between the first dielectric layer and a second dielectric layer ofthe source/drain contact structure, wherein the air gap extends alongsidewalls of the source/drain contact structure; and forming anamorphous silicon structure that wraps top corners of the seconddielectric layer, wherein the amorphous silicon structure is disposedbetween the first dielectric layer and the second dielectric layer ofthe source/drain contact structure.
 17. The method of claim 16, furthercomprising oxidizing the amorphous silicon structure, such that theamorphous silicon structure includes amorphous silicon portions andsilicon oxide portions.
 18. The method of claim 16, wherein the formingthe amorphous silicon structure includes reducing a length of the airgap.
 19. The method of claim 16, further comprising forming a via on thesource/drain contact structure, wherein the via extends through theamorphous silicon structure.
 20. The method of claim 19, wherein the viais disposed on a top surface and a sidewall surface of the amorphoussilicon structure.